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january 2015 docid027327 rev 1 1 / 20 this is information on a product in full production. www.st.com stb42n60m2 - ep, stp42n60m2 - e p, stw42n60m2 - ep n - channel 600 v, 0.076 typ., 34 a mdmesh? m2 ep power mosfets in d2pak, to - 220 and to - 247 packages datasheet - production data figure 1 : internal schematic diagram features order code v ds @ t jmax r ds(on) max. i d stb42n60m2 -ep 650 v 0.087 ? 34 a stp42n60m2 -ep stw42n60m2 -ep ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? very low turn - off switching losses ? 100% avalanche tested ? zener - protected applications ? switching applications ? tailored for very high frequency converters (f > 150 khz) description these devices are n - channel power mosfets dev eloped using mdmesh? m2 ep enhanced performance technology. thanks to their strip layout and improved vertical structure, the devices exhibit low on - resistance and optimized switching characteristics with very low turn - off switching losses, rendering them suitable for the most demanding very high frequency converters. table 1: device summary order code marking package packaging stb42n60m2 -ep 42n60m2ep d2pak tape and reel stp42n60m2 -ep to -220 tube stw42n60m2 -ep to -247 1 3 2 tab to-247 1 2 3 1 2 3 tab to-220 tab d2pak d(2, t ab) g(1) s(3) am01476v1
contents stb42n60m2 - ep, stp 42n60m2 - ep, stw42n60m2 - ep 2 / 20 docid027327 rev 1 contents 1 electrical ratings ............................................................................. 3 2 electrical characteristics ................................................................ 4 2.2 electrical characteristics (curves) ...................................................... 6 3 test circuits ..................................................................................... 9 4 pac kage mechanical data ............................................................. 10 4.1 d2pak package information ............................................................ 10 4.2 to - 220 type a package information ................................................ 13 4.3 to - 247 package information ........................................................... 15 5 packaging mechanical data .......................................................... 17 6 revision history ............................................................................ 19
stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep electrical ratings docid027327 rev 1 3 / 20 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (contin uous) at t c = 25 c 34 a i d drain current (continuous) at t c = 100 c 22 a i dm (1) drain current (pulsed) 136 a p tot total dissipation at t c = 25 c 250 w dv/dt (2) peak diode recovery v oltage slope 15 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c notes: (1) pulse width limited by safe operating area. (2) i sd 34 a, di/dt 400 a/s; v ds(peak) < v (br)dss , v dd = 400 v. (3) v ds 480 v table 3: thermal data symbol parameter value unit d2pak to -220 to - 247 r thj - case thermal resistance junction - case max 0.50 c/w r thj - pcb (1) thermal resistance junction - pcb max 30 c/w r thj - amb thermal resistance junction - ambient max 62.5 50 c/w notes: (1) when mounted on fr - 4 board of inch2, 2oz cu. table 4: avalanche characteristics symbol parameter value unit i ar avalanche current , repetetive or not repetetive (pulse width limited by t jmax ) 6 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar ; v dd = 50 v) 800 mj
electrical characteristics stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep 4 / 20 docid027327 rev 1 2 electrical characteristics t c = 25 c unless otherwise specified table 5: on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1 a v gs = 0 v, v ds = 600 v, t c = 125 c 100 a i gss gate - body leakage current v ds = 0 v, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain - source on- resistance v gs = 10 v, i d = 1 7 a 0.076 0.087 ? table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 2370 - pf c oss output capacitance - 112 - pf c rss reverse transfer capacitance - 2.5 - pf c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 454 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 4.5 - ? q g total gate charge v dd = 480 v, i d = 34 a, v gs = 10 v (see figure 18: "gate charge test circuit" ) - 55 - nc q gs gate - source charge - 8.5 - nc q gd gate - drain charge - 25 - nc notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 t o 80% v dss table 7: switching energy symbol parameter test conditions min. typ. max. unit e (off) turn - off energy (from 90% v gs to 0% i d ) v dd = 400 v, i d = 2.5 a, r g = 4.7 ?, v gs = 10 v - 13 - j v dd = 400 v, i d = 5 a, r g = 4.7 ?, v gs = 10 v - 14.5 - j
stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep electrical characteristics docid027327 rev 1 5 / 20 table 8: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 17 a, r g = 4.7 , v gs = 10 v (see figure 17: "switching times test circuit for resistive load" and figure 22: "switching time waveform" ) - 16.5 - ns t r rise time - 9.5 - ns t d(off) turn - off- delay time - 96.5 - ns t f fall time - 8 - ns table 9: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 34 a i sdm (1) source - drain current (pulsed) - 136 a v sd ( 2) forward on voltage v gs = 0 v, i sd = 34 a - 1.6 v t rr reverse recovery time i sd = 34 a, di/dt = 100 a/s, v dd = 60 v (see figure 22: "switching time waveform" ) - 438 ns q rr reverse recovery charge - 9 c i rrm reve rse recovery current - 41.5 a t rr reverse recovery time i sd = 34 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 22: "switching time waveform" ) - 538 ns q rr reverse recovery charge - 12 c i rrm reverse reco very current - 44.5 a notes: (1) pulse width is limited by safe operating area (2) pulsed: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep 6 / 20 docid027327 rev 1 2.2 electrical characteristics (curves) figure 2 : safe operating area for d2pak and to -220 figure 3 : therma l impedance for d2pak and to -220 figure 4 : safe operating area for to - 247 figure 5 : thermal impedance for to - 247 figure 6 : output characteristics figure 7 : transfer characteristics gipg070120151456als 0 . 1 1 1 0 10 0 0 . 1 1 1 0 10 0 i d (a) 10s 100s 1ms 10ms operation in this area is limited by max r ds(on) t j =150c t c =25c single pulse v ds (v) k t p ? z th = k*r thj-c = t p / ? single pulse 0.01 =0.5 10 -1 10 -2 10 -4 10 -5 10 -3 10 -2 10 -1 t p (s) 0.2 0.1 0.05 0.02 gc20540 0 . 1 1 1 0 10 0 0 . 1 1 1 0 10 0 i d (a) 10s 100s 1ms 10ms operation in this area is limited by max r ds(on) t j =150c t c =25c single pulse v ds (v) gipg070120151628als k t p ? z th = k*r thj-c = t p / ? single pulse 0.01 =0.5 10 -1 10 -2 10 -3 10 -4 10 -5 10 -3 10 -2 10 -1 t p (s) 0.2 0.1 0.05 0.02 gc18460 i d (a) v gs = 7, 8, 9, 10 v v gs = 6 v v gs = 5 v v gs = 4 v v ds (v) 0 4 8 1 2 1 6 0 2 0 4 0 6 0 8 0 gipg080120150837als gi pg 080120150946 al s 0 2 0 4 0 6 0 8 0 0 2 4 6 8 v d s = 18 v i d (a) v gs (v)
stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep electrical characteristics docid027327 rev 1 7 / 20 figure 8 : gate charge vs gate - source voltage figu re 9 : static drain - source on - resistance figure 10 : capacitance variations figure 11 : output capacitance stored energy figure 12 : turn - off switching loss vs drain current figure 13 : normalized gate threshold voltage vs temperature v dd = 480 v i d = 34 a v ds v gs (v) v ds (v) q g (nc) 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 0 2 4 6 8 1 0 1 2 0 1 0 2 0 3 0 4 0 5 0 6 0 gipg080120151019als v gs = 10 v r d s (on ) () i d (a) 0 . 0 7 2 0 . 0 7 4 0 . 0 7 6 0 . 0 7 8 0 . 0 8 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 gipg080120151046als 1 1 0 1 0 0 1 0 0 0 1 0 00 0 0 . 1 1 1 0 1 0 0 c iss c oss c rss c (pf) v ds (v) f = 1 mhz gipg08012015 1 120als 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 0 2 0 0 4 0 0 6 0 0 e oss (j) v ds (v) gipg08012015 1 125als e off (j) i d (a) 10 12 14 16 18 0 1 2 3 4 5 6 7 gipg08012015 1 154als -75 -25 25 75 125 0.6 0.7 0.8 0.9 1 1.1 v gs(th) (norm) i d = 250 a t j (c) gipg080120151205als
electrical characteristics stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep 8 / 20 docid027327 rev 1 gi pg 080120151 513a l s v (br)dss (v) i d = 1 m a t j (c) 0 . 8 8 0 . 9 2 0 . 9 6 1.00 1 . 0 4 1 . 0 8 - 7 5 - 2 5 2 5 7 5 12 5 figure 14 : normalized on - resistance vs temperature figure 15 : source - drain diode forward ch aracteristics figure 16 : normalized v(br)dss vs temperature r ds(on) (norm) v gs = 10 v t j (c) 0 . 2 0 . 6 1 1 . 4 1 . 8 2 . 2 - 7 5 - 2 5 2 5 7 5 1 2 5 gipg080120151407als gi pg 080120151416 al s v sd (v) t j = -50 c t j = 25 c t j = 150 c i sd (a) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 4 8 12 16 20 24 28 32
stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep test circuits docid027327 rev 1 9 / 20 3 test circuits figure 17 : switching times tes t circuit for resistive load figure 18 : gate charge test circuit figure 19 : test circuit for inductive load switching and diode recovery times figure 20 : unclamped inductiv e load test circui t figure 21 : unclamped inductive waveform figure 22 : switching time waveform am01469v1 v dd 47 k 1 k 47 k 2.7 k 1 k 12 v v i v gs 2200 f p w i g = const 100 100 nf d.u.t. v g v (b r )d s s v dd v dd v d i dm i d am01472v1 am01473v1 0 v gs 90% v ds t on 90% 10% 90% 10% t d(on) t r t t d(off) t f 10% 0 off
package mechanical data stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep 10 / 20 docid027327 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 d2pak package information figure 23 : d2pak (to - 263) drawing 0079457_v
stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep package mechanic al data docid027327 rev 1 11 / 20 table 10: d2pak (to - 263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r 0.4 v2 0 8
package mechanical data stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep 12 / 20 docid027327 rev 1 figure 24 : d2pak footprint all the dimensions are in millimeters.
stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep package mechanical data docid027327 rev 1 13 / 20 4.2 to - 220 type a package information figure 25 : to - 220 type a package outline
package mechanical data stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep 14 / 20 docid027327 rev 1 table 11: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2 .40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep package mechanical data docid027327 rev 1 15 / 20 4.3 to - 247 package information figure 26 : to - 247 drawing 0075325_h
package mechanical data stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep 16 / 20 docid027327 rev 1 table 12: to - 247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep packaging mechanical data docid027327 rev 1 17 / 20 5 packaging mechanical data figure 27 : tape
packaging mechanical data stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep 18 / 20 docid027327 rev 1 figure 28 : reel table 13: d2pak (to - 263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r 50 t 0.25 0.35 w 23.7 24.3 a d b f u ll r ad i u s t a p e s l o t i n c o r e f o r t a pe s t a r t 2 . 5 m m m i n . w i d t h g m e a s u r e d a t hu b c n 4 0 m m m i n . a c c e ss h o l e a t s lo t l o c a t io n t am06038v1
stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep revision history docid027327 rev 1 19 / 20 6 revision history table 14: document revisio n history date revision changes 20- jan - 2015 1 first release.
stb42n60m2 - ep, stp42n60m2 - ep, stw42n60m2 - ep 20 / 20 docid027327 rev 1 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are s old pursuant to st?s terms and conditions of sale in place at the time of order acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for applicati on assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st f or such produ ct. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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